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| Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER General Description High efficiency dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. MBR2045C is available in TO-220-3 and TO-220F-3 packages. MBR2045C Main Product Characteristics IF(AV) VRRM TJ VF(max) 2*10A 45V 150oC 0.57V Features * * * * * * * Low Forward Voltage: 0.57V @125oC Low Power Loss/High Efficiency 150oC Operating Junction Temperature 20 A Total (10A Each Diode Leg) Guard-Ring for Stress Protection High Surge Capacity Pb-Free Package Mechanical Characteristics * * * * * * Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight (Approximately): 1.9 Grams (TO-220-3, TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260oC Maximumfor 10 Seconds Applications * * * Power Supply Output Rectification Power Management Instrumentation TO-220-3 TO-220F-3 Figure 1. Package Types of MBR2045C Jul. 2008 Rev. 1. 1 1 BCD Semiconductor Manufacturing Limited Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Pin Configuration T/TFPackage (TO-220-3/TO-220F-3) MBR2045C 3 2 1 A2 K A1 A2 K A1 (Front View) Figure 2. Pin Configuration of MBR2045C Figure 3. Internal Structure of MBR2045C Ordering Information MBR2045C Circuit Type Package T: TO-220-3 TF: TO-220F-3 E1: Lead Free Blank: Tube Package TO-220-3 TO-220F-3 Part Number MBR2045CT-E1 MBR2045CTF-E1 Marking ID MBR2045CT-E1 MBR2045CTF-E1 Packing Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2008 Rev. 1. 1 2 BCD Semiconductor Manufacturing Limited Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Absolute Maximum Ratings (Each Diode Leg) (Note 1) Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC=139oC Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ TSTG dv/dt Value 45 Unit V MBR2045C 10 20 150 1.0 150 -65 to 150 10000 >400 >8000 A A A A oC oC Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC=137oC Non Repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0s, 1.0kHz) Operating Junction Temperature (Note 2) Storage Temperature Range Voltage Rate of Change (Rated VR) ESD (Machine Model=C) ESD (Human Body Model=3B) V/s V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RJA. Thermal Characteristics Parameter Symbol RJC RJA Condition Junction to Case Junction to Ambient TO-220-3 TO-220F-3 TO-220-3 Value 2.2 4.5 60 oC/W Unit Maximum Thermal Resistance Jul. 2008 Rev. 1. 1 3 BCD Semiconductor Manufacturing Limited Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Electrical Characteristics (Each Diode Leg) Parameter Condition IF=10 A, TC=25oC Maximum Instantaneous Forward IF=10 A, TC=125oC Voltage Drop (Note 3) IF=20 A, TC=25oC IF=20 A, TC=125oC Maximum Instantaneous Reverse Current (Note 3) Rated DC Voltage, TC=125oC Rated DC Voltage, TC=25oC IR 0.01 0.1 VF Symbol Typ 0.59 0.50 0.71 0.67 5 Max 0.65 0.57 0.84 0.72 15 mA V Unit MBR2045C Note 3: Pulse Test: Pulse Width=300s, Duty Cycle2.0%. Jul. 2008 Rev. 1. 1 4 BCD Semiconductor Manufacturing Limited Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Typical Performance Characteristics 100 MBR2045C IF, Instantaneous Forward Current (A) 10 1 25 C o 125 C o 150 C o 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, Instantaneous Forward Voltage (V) Figure 4. Typical Forward Voltage 10 1 0.1 IR, Reverse Current (mA) 0.01 1E-3 1E-4 1E-5 1E-6 1E-7 0 10 20 30 40 50 25 C o 100 C o 125 C o 150 C o VR, Reverse Voltage (V) Figure 5. Typical Reverse Current Jul. 2008 Rev. 1. 1 5 BCD Semiconductor Manufacturing Limited Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Typical Performance Characteristics (Continued) MBR2045C 1000 800 Capacitance (pF) 600 TJ=25 C 400 o 200 0 0 10 20 30 40 VR, Reverse Voltage (V) Figure 6. Capacitance 14 IF(AV), Average Foward Current (A) 12 10 8 6 Square 4 2 0 100 110 120 130 o 140 150 160 Case Temperature ( C) Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode) Jul. 2008 Rev. 1. 1 6 BCD Semiconductor Manufacturing Limited Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Mechanical Dimensions TO-220-3 Unit: mm(inch) MBR2045C 9.660(0.380) 10.660(0.420) 3.560(0.140) 4.060(0.160) 2.580(0.102) 3.380(0.133) 0.550(0.022) 1.350(0.053) 1.850(0.073) 0.200(0.008) 14.230(0.560) 16.510(0.650) 7 1.500(0.059) 8.520(0.335) 9.520(0.375) 27.880(1.098) 30.280(1.192) 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 7 3 1.160(0.046) 1.760(0.069) 60 0.813(0.032) 0.381(0.015) 8.763(0.345) 60 0.381(0.015) 2.540(0.100) 2.540(0.100) 0.356(0.014) 0.406(0.016) Jul. 2008 Rev. 1. 1 7 BCD Semiconductor Manufacturing Limited Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Mechanical Dimensions (Continued) TO-220F-3 Unit: mm(inch) MBR2045C 9.800(0.385) 10.200(0.401) 3.100(0.122) 3.300(0.130) 4.400(0.173) 4.700(0.185) 2.700(0.106) 3.000(0.118) 3.400(0.134) 3.600(0.142) 7.000(0.275) 7.400(0.291) 15.800(0.621) 16.200(0.637) 2.700(0.106) 3.100(0.122) 2.000(0.079) 2.800(0.110) 13.000(0.511) 13.600(0.535) 1.200(0.047) 0.900(0.035) 1.200(0.047) 1 0.650(0.026) 0.850(0.033) 2.550(0.100) 2.550(0.100) 2 3 1.500(0.059) 0.600(0.024) 0.800(0.031) Jul. 2008 Rev. 1. 1 8 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others. MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office BCD Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Rui Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, Tel: +86-755-8826 Center, Tel: Taiwan Room E, 5F, Noble 7951 No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 |
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